Design scheme of annealing furnace

      The annealing furnace is the key equipment in the modern large-scale integrated circuit production process. It is mainly used for the activation of impurities after ion implantation, shallow junction production, growth of high-quality oxide film layers and metal silicide alloy formation processes. With the rapid development of integrated circuit technology, the technical research of rapid annealing furnace system has very important theoretical significance and engineering application value for domestic development and research of rapid annealing furnace equipment with independent intellectual property rights.

       Aiming at the technical requirements of the modern semiconductor device annealing process for the rapid annealing furnace system, the company has designed the overall system technical plan through in-depth analysis and research on the basis of comprehensive analysis of various rapid annealing system technologies at home and abroad. It is proposed to use a light radiation type heat source device, and the upper and lower two rows of orthogonal lamp groups directly heat the semiconductor silicon wafer in the middle to achieve a rapid temperature rise, and use single-point temperature measurement as the temperature measurement solution as the overall system plan .According to the basic theory of heat conduction, the overall technical indicators of the system are used as the known parameters to calculate the heating power required by the system, and on this basis, the design of the heat source and reaction chamber, cooling system, air supply system and other components is realized. By analyzing the factors that affect the edge effect of the surface temperature of the silicon wafer, the design scheme of the lamp partition and the partition control is proposed to realize the uniformity of the surface temperature of the silicon wafer; through the analysis of the principle of non-contact temperature measurement, the selection and measurement of the optical pyrometer are completed. Temperature program and temperature calibration design to achieve accurate temperature measurement. The temperature controller design based on the system model ensures the accuracy and stability of temperature control; on the basis of analyzing the functional requirements of silicon wafer transfer, the process design of the transfer system is completed to achieve It improves the efficiency of system transfer and the high reliability of transfer; the functional design of the control system, the overall structure and the design of the main control program flow chart realize the full automation of the whole machine, ensuring that the system has a high level of automation, powerful control and management functions, and easy operation , High reliability and other characteristics, can well adapt to the requirements of the rapid annealing furnace system for automatic control.